Product Description

Special Features

Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Maximum substrate heater temperature: 1,**0°C for PECVD, **0°C for Sputter and **0°C for e-beam evaporation, respectively.
Automatic loading transfer chamber around which PECVD, Sputter and E-beam evaporation chambers are attached.
PC controled system : recipe save, open function, and fully automation except for e-beam evaporation module.

Specifications

PECVD
Wafer capacity : 8" x1
Average throughpu t: 2,**0 wafer/year
Source power : 2.5kW (*3.*6MHz)
Bias power : 0.3kW (*2.*6MHz)
TMP : 1,**0 l/sec
Dry pump : 9,**0 l/min
Substrate heater : SiC coated graphite, Max.1,**0°C
RF ICP coil : 2turns
MFC : CH4(*0sccm), H2(**0sccm), Ar(**0sccm)
Pressure control : Automatic pressure control system

Sputter
Wafer capacity : 8" x1
Average throughpu t: 2,**0 wafer/year
Sputter power : 1.5kW (DC)
Bias power : 0.3kW (*3.*6MHz)
TMP : 1,**0 l/sec
Dry pump : 9,**0 l/min
Substrate heater : SiC coated graphite, Max.**0°C
MFC : Ar(**0sccm), O2(*0sccm), N2(*0sccm)
Pressure control : Automatic pressure control system

E-Beam evaporation
Wafer capacity : 8" x1
Average throughpu t: 2,**0 wafer/year
E-beam power : *0kW(*0kV, 1A)
E-beam gun : 4 pocket, *5cc, **0°
TMP : 1,**0 l/sec
Dry pump : 9,**0 l/min
Substrate heater : SiC coated graphite, Max.**0°C
Thickness monitor : SQC**0